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NE6510179A
型号：NE6510179A
描述：NEC Compound Semiconductor Devices, Ltd.
厂商：1W, L/S-BAND MEDIUM POWER GaAs HJ-FET
PDF大小：85 K
页数：2 页
型号NE651R479A-T1-A参数
- CEL
- FET RF 8V 1.9GHZ 79A
- 系列: -
- 产品状态: 停产
- 晶体管类型: HFET
- 频率: 1.9GHz
- 增益: 12dB
- 电压 - 测试: 3.5 V
- 额定电流（安培）: 1A
- 噪声系数: -
- 电流 - 测试: 50 mA
- 功率 - 输出: 27dBm
- 电压 - 额定: 8 V
- 封装/外壳: 4-SMD，扁平引线
- 供应商器件封装: 79A
| 型号 | 供应商 | 数量 | 厂商/品牌 | 封装 | 批号 | 说明 | 联系 |
|---|---|---|---|---|---|---|---|
| NE6510179AEO |
| 500 | - | - | 最新批号 | 原装现货 | |
| NE6510179A-EVPW19 |
| 5000 | CEL | - | - | RF GaAs For NE6510179A-A Power at 1.9 GHz | |
| NE6510179A-EVPW19 |
| 5000 | CEL | - | - | RF GaAs For NE6510179A-A Power at 1.9 GHz | |
| NE6510179A-EVPW19 | | 5000 | CEL | - | - | RF GaAs For NE6510179A-A Power at 1.9 GHz | |
| NE6510179A-EVPW19 |
| 5000 | CEL | - | - | RF GaAs For NE6510179A-A Power at 1.9 GHz | |
| NE6510179A-EVPW24 |
| 5000 | CEL | - | - | RF GaAs For NE6510179A-A Power at 2.4 GHz |
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