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GA200SA60U
型号：GA200SA60U
描述：International Rectifier Corp.
厂商：Insulated Gate Bipolar Transistor
PDF大小：197 K
页数：8 页
型号GA200SA60U参数
- Vishay General Semiconductor - Diodes Division
- IGBT MOD 600V 200A 500W SOT227B
- 系列: -
- 产品状态: 停产
- IGBT 类型: -
- 配置: 单路
- 电压 - 集射极击穿（最大值）: 600 V
- 电流 - 集电极 (Ic)（最大值）: 200 A
- 功率 - 最大值: 500 W
- 不同?Vge、Ic 时?Vce(on)（最大值）: 1.9V @ 15V，100A
- 电流 - 集电极截止（最大值）: 1 mA
- 不同?Vce 时输入电容 (Cies): 16.5 nF @ 30 V
- 输入: 标准
- NTC 热敏电阻: 无
- 工作温度: -55°C ~ 150°C（TJ）
- 安装类型: 底座安装
- 封装/外壳: SOT-227-4，miniBLOC
- 供应商器件封装: SOT-227B
| 型号 | 供应商 | 数量 | 厂商/品牌 | 封装 | 批号 | 说明 | 联系 |
|---|---|---|---|---|---|---|---|
| GA200SA60UP |
| 5500 | VISHAY FORMERLY I.R. | - | - | SINGLE IGBT, 600V, 200A Transistor Type:IGBT DC Collector Current:200A Collector Emitter Voltage | |
| GA200SA60UP |
| 5500 | VISHAY FORMERLY I.R. | - | - | SINGLE IGBT, 600V, 200A Transistor Type:IGBT DC Collector Current:200A Collector Emitter Voltage | |
| GA200SA60UP |
| 5500 | VISHAY FORMERLY I.R. | - | - | SINGLE IGBT, 600V, 200A Transistor Type:IGBT DC Collector Current:200A Collector Emitter Voltage | |
| GA200SA60UP | | 5500 | VISHAY FORMERLY I.R. | - | - | SINGLE IGBT, 600V, 200A Transistor Type:IGBT DC Collector Current:200A Collector Emitter Voltage | |
| GA200SA60UP |
| 5500 | VISHAY FORMERLY I.R. | - | - | SINGLE IGBT, 600V, 200A Transistor Type:IGBT DC Collector Current:200A Collector Emitter Voltage | |
| GA200SA60UPBF |
| 5500 | VISHAY FORMERLY I.R. | - | - | IGBT, SOT-227 TUBE 10 Transistor Type:IGBT Collector Emitter Voltage Vces:1.6V Collector Emitter |
热门型号:
BZX84-C4V3 (4.3V)D38999/20WC98SN-LC144-02A12D38999/24WA98PN-LCECC-D3A331JGEECA-0JFQ122L770990-4B41456B9229M003CFM14W1.00K5RAT49LV001T-12JCSN74LVC1G125DCKRDS1E-SL-DC1.5VCBJ00100RAAH755169-AD38999/20WB35PAFCN13929_BARBARA-WW-PF-VERO13/18CXA3264TN-T41173-IC202AECA-1VFQ182SISP1160 DEMO BOARDVSP9437B-XZ-C3PAL8L14ACJS48168946780B4003TVJ1210A430JBCAT4XD38999/24WC98SN-LC5ST10MA1070000L/M2WD38999/20WE35PN
